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Power Transistors
2SD2137, 2SD2137A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1417 and 2SB1417A
Unit: mm
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping (TC=25C)
Ratings 60 80 60 80 6 5 3 15 2 150 -55 to +150 Unit V
18.00.5 Solder Dip
0.350.1
5.00.1 10.00.2 1.0
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD2137 2SD2137A 2SD2137 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
13.00.2 4.20.2
90
2.50.2
1.20.1
C1.0 2.250.2
0.650.1 1.050.1 0.550.1 0.550.1
emitter voltage 2SD2137A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
V V A A
C1.0
123
2.50.2
2.50.2
W C C
1:Base 2:Collector 3:Emitter MT4 Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2137 2SD2137A 2SD2137 2SD2137A 2SD2137 2SD2137A
(TC=25C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 5V, IC = 0.2A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V 30 0.3 2.5 0.2 60 80 70 10 1.8 1.2 V V MHz s s s 250 min typ max 100 100 100 100 100 Unit A A A V
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
Rank classification
Q 70 to 150 P 120 to 250
Rank hFE1
Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.
1
Power Transistors
PC -- Ta
20 6 (1) TC=Ta (2) Without heat sink (PC=2.0W) 15 (1) TC=25C 5
2SD2137, 2SD2137A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=8 30 10 3 1 TC=100C 0.3 0.1 0.03 0.01 0.01 0.03 -25C 25C
VCE(sat) -- IC
Collector power dissipation PC (W)
Collector current IC (A)
4
IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA
10
3
2
20mA
5
10mA 1
(2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
IC -- VBE
6 VCE=4V 1000
hFE -- IC
VCE=4V TC=100C 25C -25C 100 1000
fT -- IC
VCE=5V f=10MHz TC=25C
Forward current transfer ratio hFE
5
300
Transition frequency fT (MHz)
0.3 1 3 10
300
Collector current IC (A)
4
100
3 TC=100C 2 25C
30
30
10
10
1
-25C
3
3
0 0 0.4 0.8 1.2 1.6 2.0
1 0.01 0.03
0.1
1 0.01 0.03
0.1
0.3
1
3
10
Base to emitter voltage VBE (V)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
1000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25C tstg 3 1 0.3 0.1 0.03 ton tf
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (s)
300
Collector current IC (A)
10
10 3 1 0.3 0.1 0.03 0.01
ICP IC 10ms DC t=1ms
100
30
10
3
1 1 3 10 30 100
0.01 0 1 2 3 4
1
3
10
30
100
2SD2137A
300
2SD2137
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
2SD2137, 2SD2137A
Thermal resistance Rth(t) (C/W)
1000
100 (1) (2) 10
1
0.1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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